30V 4A N沟道 功率MOS FET
The XP161A11A1PR is an N-channel Power MOSFET with low on-state resistance and ultra high-speed switching characteristics.
Because high-speed switching is possible, the IC can be efficiently set thereby saving energy.
In order to counter static, a gate protect diode is built-in.
技术文件
- Product Overview
封装
| 封装名称 | 引脚数 | 个/Reel | 外形尺寸（mm） |
|---|---|---|---|
| SOT-89 | 3 | 1,000 | 4.5 x 4.0 x 1.6 |
XP161A11A1PR 系列型号列表
| 型号 | 样品 | Packages | EDA | 在线商店 |
|---|---|---|---|---|
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XP161A11A1PR-G |
SOT-89 |
XP161A11A1PR 系列相关咨询
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